new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 1 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 100 v (d-s) mosfet featrues ?trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-75 package - small footprint area - low on-resistance ?100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? dc/dc converters ? full-bridge converters ? for power bricks and pol power notes a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-75 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady stat e conditions is 105 c/w. product summary v ds (v) r ds(on) ( ? ) max. i d (a) a q g (typ.) 100 0.185 at v gs = 10 v 6.3 1.8 nc 0.310 at v gs = 4.5 v 4.9 powerpak sc-75-6l-single 6 5 4 1 2 3 d d d d g s s 1.60 mm 1.60 mm ordering information: SIB456DK-t1-ge3 (lead (pb)-free and halogen-free) marking code x x x a j x lot traceability and date code part # code n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 6.3 a t c = 70 c 5 t a = 25 c 2.7 b, c t a = 70 c 2.2 b, c pulsed drain current (t = 300 s) i dm 7 continuous source-d rain diode current t c = 25 c i s 6.3 t a = 25 c 2 b, c single pulse avalanche current l = 0.1 mh i as 2.4 single pulse avalanche energy e as 0.29 mj maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.4 b, c t a = 70 c 1.6 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol ty pical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 41 51 c/w maximum junction-to-case (drain) steady state r thjc 7.5 9.5
new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 2 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v v ds temperature coefficient ? v ds /t j i d = 250 a 54 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 4.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.6 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 10 v 6 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 1.9 a 0.153 0.185 ? v gs = 4.5 v, i d = 1.5 a 0.220 0.310 forward transconductance a g fs v ds = 10 v, i d = 1.9 a 3.7 s dynamic b input capacitance c iss v ds = 50 v, v gs = 0 v, f = 1 mhz 130 pf output capacitance c oss 54 reverse transfer capacitance c rss 10 total gate charge q g v ds = 50 v, v gs = 10 v, i d = 2.7 a 3.3 5 nc v ds = 50 v, v gs = 4.5 v, i d = 2.7 a 1.8 2.7 gate-source charge q gs 0.7 gate-drain charge q gd 1 gate resistance r g f = 1 mhz 1.3 6.5 13 ? turn-on delay time t d(on) v dd = 50 v, r l = 23 ? i d ? 2.2 a, v gen = 4.5 v, r g = 1 ? 15 30 ns rise time t r 45 90 turn-off delay time t d(off) 11 20 fall time t f 13 25 turn-on delay time t d(on) v dd = 50 v, r l = 23 ? i d ? 2.2 a, v gen = 10 v, r g = 1 ? 510 rise time t r 11 20 turn-off delay time t d(off) 10 20 fall time t f 10 20 drain-source body diode characteristics continuous source-d rain diode current i s t c = 25 c 6.3 a pulse diode forward current i sm 7 body diode voltage v sd i s = 2.2 a, v gs = 0 v 0.9 1.2 v body diode reverse recovery time t rr i f = 2.2 a, di/dt = 100 a/s, t j = 25 c 25 50 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 18 ns reverse recovery rise time t b 7
new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 3 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 4 v v gs = 10 v thru 5 v v gs = 3 v 0.000 0.100 0.200 0.300 0.400 0.500 0 1 2 3 4 5 6 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 1 2 3 4 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 80 v v d s = 25 v v d s = 50 v i d = 2.7 a 0.0 0.4 0.8 1.2 1.6 2.0 0.0 1.0 2.0 3.0 4.0 5.0 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 40 80 120 160 200 0 4 8 12 16 20 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 4.5 v v gs = 10 v i d = 1.9 a
new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 4 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) soure-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 1.8 2.0 2.2 2.4 2.6 2.8 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j - temperature ( c) i d = 250 a 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0 2 4 6 8 10 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 1.9 a 1000 100 1 0.001 0.01 0.1 10 power (w) pulse (s) 20 10 5 15 0 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied 10 s 100 s 1 s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 100 m s dc
new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 5 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating* power derating * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. 0 2 4 6 8 0 25 50 75 100 125 150 i d - drain current (a) t a - ambient temperature ( c) 0 3 6 9 12 15 25 50 75 100 125 150 t c - case temperature (c) r (w) e w o p
new product SIB456DK www.vishay.com vishay siliconix s12-1133-rev. a, 21-may-12 6 document number: 62715 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62715 . 1 0.1 0.01 normalized effective transient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w ave p u lse d u ration (s) d u ty cycle = 0.5 single p u lse 0.1 0.2 0.05 0.02 1. d u ty cycle, d = 2. per unit base = r thja = 105 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. s u rface mo u nted p dm 10 -3 10 -2 10 -1 10 -4 1 0.1 sq u are w ave p u lse d u ration (s) normalized effective transient thermal impedance d u ty cycle = 0.5 single p u lse 0.02 0.05 0.1 0.2
vishay siliconix package information document number: 73000 06-aug-07 www.vishay.com 1 powerpak ? sc75-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 d1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 d2 0.10 0.20 0.30 0.004 0.008 0.012 e 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 e1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 e2 0.20 0.25 0.30 0.008 0.010 0.012 e3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 bsc 0.020 bsc 0.50 bsc 0.020 bsc k 0.180 typ 0.007 typ 0.245 typ 0.010 typ k1 0.275 typ 0.011 typ 0.320 typ 0.013 typ k2 0.200 typ 0.008 typ 0.200 bsc 0.008 typ k3 0.255 typ 0.010 typ k4 0.300 typ 0.012 typ l 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 t 0.03 0.08 0.13 0.001 0.003 0.005 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5935 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting e b e b k1 k2 k 3 k2 k1 k2 k2 pin6 pin5 pin4 d1 d2 d1 d1 pin6 pin5 pin4 pin1 pin2 pin 3 detail z da a1 z z c e e1 e1 e1 k k k k4 l e2 pin2 pin1 pin 3 l e 3
application note 826 vishay siliconix document number: 70488 www.vishay.com revision: 21-jan-08 13 application note recommended pad layout for powerpak ? sc75-6l single 1 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.250 (0.01) 0.300 (0.012) 1.700 (0.067) 1.100 (0.043) 0.300 (0.012) 0.180 (0.007) 0.620 (0.024) 0.300 (0.012) 2.000 (0.079) 0.250 (0.01) 0.545 (0.021) 0.670 (0.026) 2.000 (0.079) dimensions in mm/(inches) 0.200 (0.008) 0.370 (0.015) 0.500 (0.02) return to index
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